| PART |
Description |
Maker |
| 2SA1698 |
0.07 A, 200 V, PNP, Si, POWER TRANSISTOR, TO-126
|
Panasonic, Corp.
|
| 2SA1170 |
Silicon PNP Power Transistors MT-200 package
|
Savantic
|
| 2N6031 |
PNP SILICON POWER TRANSISTOR 140 VOLTS, 200 WATTS
|
Central Semiconductor Corp
|
| IRF230-233 IRF231 IRF232 IRF233 MTP12N18 MTP12N20 |
N-Channel Power MOSFETs, 12A, 150-200 V 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel Power MOSFETs, 12A, 150-200 V N沟道功率MOSFET，第12A50-200 V
(MTP12N18 / MTP12N20) N-Channel Power MOSFETs
N-Channel Power MOSFETs/ 12A/ 150-200 V
N-Channel Power MOSFETs 12A 150-200 V
|
http://
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| CFB1063 CFB1063P CFD1499Q |
2.000W Power PNP Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 60 - 200 hFE. Complementary CFD1499
2.000W Power PNP Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 100 - 200 hFE. Complementary CFD1499P
2.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 60 - 120 hFE. Complementary CFB1063Q
|
Continental Device India Limited
|
| MMBTA92LT1_D ON2140 MMBTA93LT1 |
High Voltage Transistors(PNP Silicon) 50 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
*Motorola Preferred Device
|
ON Semiconductor
|
| 2N3906J18Z 2N3906TA |
PNP General Purpose Amplifier; Package: TO-92; No of Pins: 3; Container: Bulk 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
PNP General Purpose Amplifier; Package: TO-92; No of Pins: 3; Container: Ammo 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
|
| 2N3906-AP |
TRANSISTOR PNP GP 40V TO92 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Micro Commercial Components, Corp.
|
| IRKLF200-04HK IRKHF200-04HK IRKLF200-08HK IRKLF200 |
200 A, MAGN-A-pak Power Modules(200A,4V,快速可控硅/可控硅L结构MAGN-A-pak功率模块)
200 A, MAGN-A-pak Power Modules(200A,4V,快速可控硅/二极H结构MAGN-A-pak功率模块)
200 A, MAGN-A-pak Power Modules(200A,8V,快速可控硅/可控L结构MAGN-A-pak功率模块)
200 A, MAGN-A-pak Power Modules(200A,8V,快速可控硅/二极H结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块00安培V的，快速可控硅/二极结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,12V,快速可控硅/二极H结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块00安培2V的，快速可控硅/二极结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,4V,快速可控硅/可控硅T结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块200安培4V电压，快速可控硅/可控结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,12V,快速可控硅/可控硅T结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块200安培2V的，快速可控硅/可控结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,8V,蹇?????纭?浜??绠∪缁??MAGN-A-pak???妯″?)
|
International Rectifier, Corp.
|
| SBTC-2-20_20L SBTC-2-20 SBTC-2-20L SBTC-2-2020L |
Power Splitter/Combiners 2 Way-050з 200 to 2000 MHz 200 MHz - 2000 MHz RF/MICROWAVE COMBINER, 2.2 dB INSERTION LOSS
Power Splitter/Combiners 2 Way-0° 50 200 to 2000 MHz
Power Splitter/Combiners 2 Way-0∑ 50з 200 to 2000 MHz
Power Splitter/Combiners 2 Way-0 50 200 to 2000 MHz
|
MINI[Mini-Circuits]
|
| MJL3281A MJL1302 MJL1302A MJL3281 |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS
|
MOTOROLA[Motorola, Inc]
|
| MMFT107T1D MMFT107T3 MMFT107T1 MMFT107 MMFT107T1-D |
Power MOSFET 250 mA, 200 Volts N-Channel SOT-223
Power MOSFET 250 mA / 200 Volts
Power MOSFET 250 mA, 200 Volts 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
|
ONSEMI[ON Semiconductor]
|
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